? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t c = 25c to 150c 2500 v v cgr t j = 25c to 150c, r ge = 1m 2500 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 5.5 a i c110 t c = 110c 2.0 a i cm t c = 25c, 1ms 13.5 a ssoa v ge = 15v, t vj = 125c, r g = 50 i cm = 6 a (rbsoa) clamped inductive load v ce 2000 v p c t c = 25c 32 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g ds100162(06/09) ixgh2n250 IXGT2N250 v ces = 2500v i c110 = 2a v ce(sat) 3.1v high voltage igbts for capacitor discharge applications g = gate c = collector e = emitter tab = collector to-268 (ixgt) g e c (tab) to-247 (ixgh) g c e c (tab) features z optimized for low conduction and switching losses z international standard packages advantages z high power density z low gate drive requirement applications z switched-mode and resonant-mode power supplies z uninterruptible power supplies (ups) z capacitor discharge circuits advance technical information symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 2500 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.5 v i ces v ce = 0.8 ? v ces , v ge = 0v 10 a t j = 125c 100 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c110 , v ge = 15v, note 1 2.6 3.1 v t j = 125c 3.1 v
ixys reserves the right to change limits, test conditions and dimensions. ixgh2n250 IXGT2N250 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain to-268 (ixgt) outline symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c110 , v ce = 10v, note 1 0.7 1.2 s c ies 144 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 8.7 pf c res 3.2 pf q g 10.5 nc q ge i c = i c110 , v ge = 15v, v ce = 1000v 6.4 nc q gc 1.0 nc t d(on) 22 ns t r 74 ns t d(off) 70 ns t f 100 ns t d(on) 26 ns t r 89 ns t d(off) 74 ns t f 204 ns r thjc 3.9 c/w r thck (to-247) 0.21 c/w note 1. pulse test, t 300 s; duty cycle, d 2%. advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. resistive switching times, t j = 25c i c = i c110 , v ge = 15v v ce = 1800v, r g = 50 resistive switching times, t j = 125c i c = i c110 , v ge = 15v v ce = 1800v, r g = 50
? 2009 ixys corporation, all rights reserved fig. 1. output characteristics @ 25oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ce - volts i c - amperes v ge = 25v 20v 15v 10v 5v fig. 2. extended output characteristics @ 25oc 0 4 8 12 16 20 24 28 0 2 4 6 8 10 12 14 16 18 20 v ce - volts i c - amperes v ge = 25v 15v 10v 20v fig. 3. output characteristics @ 125oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ce - volts i c - amperes v ge = 25v 20v 15v 10v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 4a i c = 2a i c = 1a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 4a t j = 25oc 2a 1a fig. 6. input admittance 0 1 2 3 4 5 6 7 8 3456789101112 v ge - volts i c - amperes t j = - 40oc 25oc 125oc ixgh2n250 IXGT2N250 ixys ref: g_2n250(2p)6-17-09
ixys reserves the right to change limits, test conditions and dimensions. ixgh2n250 IXGT2N250 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 7. transconductance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 012345678 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 01234567891011 q g - nanocoulombs v ge - volts v ce = 1000v i c = 2a i g = 1ma fig. 9. reverse-bias safe operating area 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 250 500 750 1000 1250 1500 1750 2000 2250 2500 v ce - volts i c - amperes t j = 150oc r g = 50 ? dv / dt < 10v / ns fig. 10. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2009 ixys corporation, all rights reserved ixys ref: g_2n250(2p)6-17-09 ixgh2n250 IXGT2N250 fig. 13. resistive turn-on rise time vs. collector current 20 40 60 80 100 120 140 160 180 200 1.01.52.02.53.03.54.0 i c - amperes t r - nanoseconds r g = 50 ? v ge = 15v v ce = 1800v t j = 125oc t j = 25oc fig. 14. resistive turn-on switching times vs. gate resistance 60 80 100 120 140 160 180 200 220 240 260 280 50 75 100 125 150 175 200 225 250 275 300 r g - ohms t r - nanoseconds 14 18 22 26 30 34 38 42 46 50 54 58 t d(on) - nanoseconds t r t d(on ) - - - - t j = 125oc, v ge = 15v v ce = 1800v i c = 4a, 2a fig. 15. resistive turn-off switching times vs. junction temperature 0 50 100 150 200 250 300 350 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 55 60 65 70 75 80 85 90 t d(off) - nanoseconds t f t d(off) - - - - r g = 50 ? , v ge = 15v v ce = 1800v i c = 2a i c = 4a fig. 16. resistive turn-off switching times vs. collector current 10 100 1,000 10,000 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i c - amperes t f - nanoseconds 60 70 80 90 t d(off) - nanoseconds t f t d(off ) - - - - r g = 50 ? , v ge = 15v v ce = 1800v t j = 125oc t j = 25oc fig. 12. resistive turn-on rise time vs. junction temperature 20 40 60 80 100 120 140 160 180 200 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 50 ? v ge = 15v v ce = 1800v i c = 2a i c = 4a fig. 17. resistive turn-off switching times vs. gate resistance 0 50 100 150 200 250 300 350 400 450 500 50 75 100 125 150 175 200 225 250 275 300 r g - ohms t f - nanoseconds 20 40 60 80 100 120 140 160 180 200 220 t d(off) - nanoseconds t f t d(off ) - - - - t j = 125oc, v ge = 15v v ce = 1800v i c = 4a i c = 2a
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